Epitaxial growth and optical investigations of ZnTeO alloys

✍ Scribed by Nabetani, Y. ;Okuno, T. ;Aoki, K. ;Kato, T. ;Matsumoto, T. ;Hirai, T.

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 326 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200669647

✦ Synopsis

Abstract

We have grown zincblende‐structured ZnTeO alloy semiconductors on GaAs substrates by molecular beam epitaxy using RF‐excited O. O concentrations measured by secondary ion mass spectroscopy were found to increase with the increase of O~2~ flow rate supplied during the growth, while the change of lattice constant measured by X‐ray diffraction does not follow Vegard's law. It is considered that the O atoms are incorporated not only into group‐VI sites but also as interstitials. Formation of other compounds such as ZnTeO~3~, Zn~2~Te~3~O~8~, and TeO~2~ was not detected. Optical reflectance spectroscopy revealed the increase of the band‐gap energy with O concentration that can be interpreted as the repulsive interaction between the energy states originated in the localized states of O and the conduction‐band edge of host ZnTe. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)