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Layered growth model and epitaxial growth structures for SiCAlN alloys

✍ Scribed by Zhaoqing Liu; Jun Ni; Xiaoao Su; Zhenhong Dai


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
419 KB
Volume
404
Category
Article
ISSN
0921-4526

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## Abstract Structural defects of α‐SiC epitaxial layers grown by sublimation β€œsandwich‐method” in vacuum at the temperatures ranging from 1600 to 2100 Β°C have been investigated by X‐ray topography and optical microscopy methods. It was shown, that perfect SiC layers with the homogeneous polytype s