Growth and optical properties of epitaxial layers of CdS and CdSe

✍ Scribed by M. Grün; U. Becker; H. Gieβen; Th. Gilsdorf; F. Zhou; J. Loidolt; M. Müller; H. Zangerle; M. Hetterich; C. Klingshirn

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 879 KB
• Volume: 2
• Category: Article
• ISSN: 0925-3467
• DOI: 10.1016/0925-3467(93)90008-o

✦ Synopsis

Wurtzite type epilayers ofCdS and CdSe have been grown by hot-wall epitaxy and pulsed laser evaporation epitaxy on BaF 2, SrF2 and GaAs substrates. The photoluminescence spectra of the epilayers were dominated by the 12 lines in all cases. Optical reflection spectroscopy revealed, that the residual stress is caused mainly by thermal contraction. Under high excitation, pronounced exciton bleaching and formation of an electron-hole plasma were observed in absorption and luminescence, respectively.