Various optical techniques have been developed in the last few years for real-time analysis of surfaces and near-surface regions during semiconductor epitaxy. These techniques are providing new insights into microscopic mechanisms of crystal growth and new opportunities for several levels of closed-
Real-time optical diagnostics for measuring and controlling epitaxial growth
β Scribed by D.E. Aspnes; I. Kamiya; H. Tanaka; R. Bhat; L.T. Florez; J.P. Harbison; W.E. Quinn; M. Tamargo; S. Gregory; M.A.A. Pudensi; S.A. Schwarz; M.J.S.P. Brasil; R.E. Nahory
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 573 KB
- Volume
- 225
- Category
- Article
- ISSN
- 0040-6090
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