✦ LIBER ✦

Real-time optical analysis and control of semiconductor epitaxy: Progress and opportunity

✍ Scribed by D.E. Aspnes

Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 859 KB
Volume: 101
Category: Article
ISSN: 0038-1098
DOI: 10.1016/s0038-1098(96)00447-4

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✦ Synopsis

Various optical techniques have been developed in the last few years for real-time analysis of surfaces and near-surface regions during semiconductor epitaxy. These techniques are providing new insights into microscopic mechanisms of crystal growth and new opportunities for several levels of closed-loop feedback control of epitaxy, including control at the product (sample) level. The latter is made possible by new data-reduction algorithms that return the dielectric response of the most recently deposited material even if nothing is known about the underlying sample structure. Examples are provided, and opportunities and challenges discussed. Copy-

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