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Optical spectroscopy of implanted silicon annealed with incoherent light

✍ Scribed by V. E. Borisenko; V. V. Gribkovskii; G. V. Litvinovich


Publisher
Springer US
Year
1983
Tongue
English
Weight
192 KB
Volume
39
Category
Article
ISSN
0021-9037

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Silicon capped by thermal oxide has been implanted with 1 β€’ 10 17 H/cm 2 and the implant profile peaking at the interface. Samples were subjected to thermal annealing and characterized by ERD, FTIR, RBS/channeling, UV/VIS reflectance and cathodoluminescence regarding H-content, crystalline quality a