𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Optical recombination of ZnO nanowires grown on sapphire and Si substrates

✍ Scribed by Zhao, Q. X.; Willander, M.; Morjan, R. E.; Hu, Q-H.; Campbell, E. E. B.


Book ID
121833136
Publisher
American Institute of Physics
Year
2003
Tongue
English
Weight
311 KB
Volume
83
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Optical properties of Ge nanowires grown
✍ Kamenev, B. V. ;Sharma, V. ;Tsybeskov, L. ;Kamins, T. I. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 199 KB

## Abstract The cover picture of the present issue of physica status solidi (a) contains two scanning electron micrographs showing approximately 40 nm diameter Ge nanowires grown by the vapor–liquid–solid (VLS) technique on Si(100) (upper right figure) and Si(111) (lower left figure) substrates, re

Optical properties of Ge nanowires grown
✍ Kamenev, B. V. ;Sharma, V. ;Tsybeskov, L. ;Kamins, T. I. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 285 KB

## Abstract We report photoluminescence (PL) and Raman scattering (RS) measurements of (111) oriented Ge nanowires (NWs) grown by chemical vapor deposition on (100) and (111) silicon substrates. Our PL measurements strongly suggest that the observed emission originates at low‐defect density Ge NW –

Morphology of ZnO grown by MOCVD on sapp
✍ C Munuera; J ZΓΊΓ±iga-PΓ©rez; J.F Rommeluere; V Sallet; R Triboulet; F Soria; V MuΓ± πŸ“‚ Article πŸ“… 2004 πŸ› Elsevier Science 🌐 English βš– 516 KB