In this paper we describe the results of temperature dependent photoluminescence intensity and decay time measurements on a series of InAs/AlGaAs quantum dot structures where the depth of the confinement potential is varied from sample to sample. By comparison with a simple theoretical model the tem
β¦ LIBER β¦
Optical properties of near surface-InAs quantum dots and their formation processes
β Scribed by I Kamiya; Ichiro Tanaka; H Sakaki
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 579 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1386-9477
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