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Influence of Thiol Coupling on Photoluminescence of Near Surface InAs Quantum Dots

โœ Scribed by E.F. Duijs; F. Findeis; R.A. Deutschmann; M. Bichler; A. Zrenner; G. Abstreiter; K. Adlkofer; M. Tanaka; E. Sackmann


Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
92 KB
Volume
224
Category
Article
ISSN
0370-1972

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Ultrahigh vacuum scanning tunnelling mic
โœ Bolotov, L. N.; Nakamura, A.; Evtikhiev, V. P.; Tokranov, V. E.; Titkov, A. N. ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 372 KB ๐Ÿ‘ 2 views

The morphology and electronic properties of InAs quantum dots (QDs) on the GaAs(001) surface has been studied by ultrahigh vacuum scanning tunnelling microscopy/spectroscopy after removal of a preliminary deposited protective As layer. A thermal annealing procedure has been developed, which, applied