Temperature Dependent Optical Properties of InAs/AlGaAs Quantum Dots

✍ Scribed by X. Chen; P. Dawson; M.J. Godfrey; M. Hopkinson

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 65 KB
• Volume: 224
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/1521-3951(200103)224:1<107::aid-pssb107>3.0.co;2-7

✦ Synopsis

In this paper we describe the results of temperature dependent photoluminescence intensity and decay time measurements on a series of InAs/AlGaAs quantum dot structures where the depth of the confinement potential is varied from sample to sample. By comparison with a simple theoretical model the temperature dependent behaviour is ascibed to a combination of thermally induced occupation of excitonic dark states and thermionic emission of the confined holes.