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Optical properties of high density InGaN QDs grown by MOCVD

โœ Scribed by C.K. Lee; J.H. Hsu; D.C. Wang; Y.H. Chang; H.C. Kuo; S.C. Wang

Book ID
103845038
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
236 KB
Volume
26
Category
Article
ISSN
0928-4931

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We have investigated the influence of the TEGa flow on the optical and structural properties of InGaN/GaN multiple quantum wells (MQWs) with an indium composition around 20%. The samples with five-pairs InGaN/GaN MQWs were grown on sapphire substrates by metalorganic chemical vapor deposition. Photo