New empirical equations for simulating the optical and bias dependencies of the junction capacitances of the GaAs MESFET are presented in this paper. New linear and quasilogarithmic ¨ariations ( ) ¨ersus the incident optical power PL for gate-to-drain and gate-to-source ( ) capacitances C and C , re
✦ LIBER ✦
Optical effect on GaAs MESFETs
✍ Scribed by G.J. Chaturvedi; R.K. Purohit; B.L. Sharma
- Publisher
- Elsevier Science
- Year
- 1983
- Weight
- 203 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0020-0891
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