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Optical characterization of layers for silicon microelectronics

✍ Scribed by A. Chabli

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
954 KB
Volume
40
Category
Article
ISSN
0167-9317

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✦ Synopsis

The optical characterization techniques including multiple internal reflection, spectroscopic ellipsometry, X-ray specular reflectometry and Raman spectroscopy, are presented from the point of view of the silicon microelectronics. Practical examples are selected. The advantages and limitations of each techniques are shown. It is emphasized that reliable results can be obtained by complementing these tools each other.

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Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt