Porous silicon (PSi) samples were prepared by electrochemical etching of silicon-on-insulator wafers, consisting of 45 m thick p-type (111) silicon epitaxial layer grown on a thin 100 nm SiO 2 layer on silicon substrates, by varying the concentration of 48% HF in ethanol solution. Within the epitaxi
✦ LIBER ✦
Optical characterization of porous silicon layers formed on heavily p-doped substrates
✍ Scribed by H. Münder; C. Andrzejak; M.G. Berger; T. Eickhoff; H. Lüth; W. Theiss; U. Rossow; W. Richter; R. Herino; M. Ligeon
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 231 KB
- Volume
- 56-58
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Structure and optical properties of poro
✍
M. Balarin; O. Gamulin; M. Ivanda; V. Djerek; O. Celan; S. Music; M. Ristic; K.
📂
Article
📅
2007
🏛
Elsevier Science
🌐
English
⚖ 743 KB
Optical and electrical characterization
✍
M.A. Sánchez-García; F.J. Sánchez; F. Calle; E. Muñoz; E. Calleja; K.S. Stevens;
📂
Article
📅
1996
🏛
Elsevier Science
🌐
English
⚖ 343 KB
Structural, optical and electrical chara
✍
M. Balarin; O. Gamulin; M. Ivanda; M. Kosović; D. Ristić; M. Ristić; S. Musić; K
📂
Article
📅
2009
🏛
Elsevier Science
🌐
English
⚖ 763 KB
Silicon-on insulator (SOI) wafers, consisting of 22 lm thick p-type silicon epitaxial layer grown on 280 lm thick n-type (1 1 1) silicon substrate, were electrochemically etched in hydrofluoric acid (HF) to produce porous silicon (PS) samples. The pores of different size and different depth were obt