Optical, non-destructive characterizatio
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Peter Borden
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Article
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2001
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Elsevier Science
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English
⚖ 266 KB
As ULSI technology moves below the 180 nm technology node, tight control of the depth of ultra-shallow junctions (USJ), such as those used in source-drain extensions, becomes critical. The problem is one of both local control and uniformity over the full area of 200 and 300 mm wafers. This paper des