Optical and photo-carrier characterization of ultra-shallow junctions in silicon
β Scribed by QiuPing Huang, BinCheng Li, ShengDong Ren
- Book ID
- 120799774
- Publisher
- Science in China Press (SCP)
- Year
- 2013
- Tongue
- English
- Weight
- 631 KB
- Volume
- 56
- Category
- Article
- ISSN
- 1672-1799
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As ULSI technology moves below the 180 nm technology node, tight control of the depth of ultra-shallow junctions (USJ), such as those used in source-drain extensions, becomes critical. The problem is one of both local control and uniformity over the full area of 200 and 300 mm wafers. This paper des
This work combines plasma doping implantation (PLAD) with laser annealing using excimer laser, for the formation of ultra-shallow junctions. For that purpose, high dose BF 3 was implanted in n-type silicon wafers using PLAD. The as implanted material was investigated by high resolution TEM, measured