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Optical and photo-carrier characterization of ultra-shallow junctions in silicon

✍ Scribed by QiuPing Huang, BinCheng Li, ShengDong Ren


Book ID
120799774
Publisher
Science in China Press (SCP)
Year
2013
Tongue
English
Weight
631 KB
Volume
56
Category
Article
ISSN
1672-1799

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As ULSI technology moves below the 180 nm technology node, tight control of the depth of ultra-shallow junctions (USJ), such as those used in source-drain extensions, becomes critical. The problem is one of both local control and uniformity over the full area of 200 and 300 mm wafers. This paper des

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✍ A. Florakis; D. Tsoukalas; I. Zergioti; K. Giannakopoulos; P. Dimitrakis; D.G. P πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 558 KB

This work combines plasma doping implantation (PLAD) with laser annealing using excimer laser, for the formation of ultra-shallow junctions. For that purpose, high dose BF 3 was implanted in n-type silicon wafers using PLAD. The as implanted material was investigated by high resolution TEM, measured