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Optical characterization of doped top layers in SOI structures formed by ion implantation

โœ Scribed by Yu Yuehui; Liu Xianghuai; Zou Shichang; P.L.F. Hemment


Book ID
113286849
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
410 KB
Volume
106
Category
Article
ISSN
0168-583X

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Arsenic ions were implanted into silicon-on-insulator (SOl) structures at an incident energy of 100 keV to a dose of 2 x 10 lscm-z. Conductive top layers were formed in the SOl structures after annealing at 1200 ~ for 20 s. Infrared reflection spectra in the wave number range of 1500-5000 cm -1 were

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Silicon oxynitride (Si x O y N z ) buried insulating layers were synthesized by SIMNOX (separation by implanted nitrogen-oxygen) process by 14 N + and 16 O + ion implantation to high fluence levels 1 โ€ข 10 17 , 2.5 โ€ข 10 17 and 5 โ€ข 10 17 ions cm ร€2 sequentially in the ratio 1:1 at 150 keV into p-type