Arsenic ions were implanted into silicon-on-insulator (SOl) structures at an incident energy of 100 keV to a dose of 2 x 10 lscm-z. Conductive top layers were formed in the SOl structures after annealing at 1200 ~ for 20 s. Infrared reflection spectra in the wave number range of 1500-5000 cm -1 were
โฆ LIBER โฆ
Optical characterization of doped top layers in SOI structures formed by ion implantation
โ Scribed by Yu Yuehui; Liu Xianghuai; Zou Shichang; P.L.F. Hemment
- Book ID
- 113286849
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 410 KB
- Volume
- 106
- Category
- Article
- ISSN
- 0168-583X
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