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Optical and Structural Analysis of GaN Grown by Remote Plasma Enhanced Laser Induced Chemical Vapour Deposition

✍ Scribed by Afifuddin; K.S.A. Butcher; H. Timmers; T.L. Tansley


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
146 KB
Volume
0
Category
Article
ISSN
1862-6351

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The effects of hydrogen on GaN growth by remote plasma-enhanced metal-organic chemical vapor deposition (RPE-MOCVD) were investigated. Hydrogen addition changed the gas-phase reaction in the plasma and resulted in a Ga excess growth condition by scavenging activated nitrogen species, resulting in de