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Optical and crystallographic properties and impurity incorporation of GaxIn1−xAs (0.44<x<0.49) grown by liquid phase epitaxy, vapor phase epitaxy, and metal organic chemical vapor deposition

✍ Scribed by Goetz, K.-H.; Bimberg, D.; Jürgensen, H.; Selders, J.; Solomonov, A. V.; Glinskii, G. F.; Razeghi, M.

Book ID
120262400
Publisher
American Institute of Physics
Year
1983
Tongue
English
Weight
918 KB
Volume
54
Category
Article
ISSN
0021-8979

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