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A comparative study of (100) GaAs films grown by liquid-phase epitaxy, molecular-beam epitaxy and metal-organic chemical vapor deposition by Raman spectroscopy

✍ Scribed by Swaminathan, V.; Jayaraman, A.; Zilko, J.L.; Stall, R.A.


Book ID
123508382
Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
498 KB
Volume
3
Category
Article
ISSN
0167-577X

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Optical, crystallographic, and transport properties of nominally undoped n-type and Zn doped ptype Ga x Inl \_ x As/lnP (0.44 < x < 0.49) grown by liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), and metal organic chemical vapor deposition (MOCVD) have been studied and related to the different