๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Operating characteristics of multijunction solar cells

โœ Scribed by Geoffrey S. Kinsey; Peichen Pien; Peter Hebert; Raed A. Sherif


Book ID
108265517
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
449 KB
Volume
93
Category
Article
ISSN
0927-0248

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Multijunction concentrator solar cells
โœ J.G. Werthen ๐Ÿ“‚ Article ๐Ÿ“… 1987 ๐Ÿ› Elsevier Science โš– 54 KB

Multijunction concentrator AIGaAs and GaInAs subcells have been fabricated using metal-organic chemical vapor deposition. Under 400 Suns air mass 1.5, conversion efficiencies as high as 18% have been measured for A1GaAs (1.75 eV) cells grown lattice matched to GaAs. Under similar illumination condit

GaInP/GaAs multijunction solar cells
โœ J.M. Olson; A. Kibbler; T. Gessert ๐Ÿ“‚ Article ๐Ÿ“… 1987 ๐Ÿ› Elsevier Science โš– 105 KB
CdTe/CuInSe2 multijunction solar cells
โœ J.D. Meakin; R.W. Birkmire; J.E. Phillips ๐Ÿ“‚ Article ๐Ÿ“… 1987 ๐Ÿ› Elsevier Science โš– 52 KB

ture. GaInP2 with good phototuminescence characteristics has been grown by metalorganic chemical vapor deposition using trimethylindium, trimethylgallium and phosphine, Shallow homojunctions in GaInP2, heterotunnel junctions between GaInP2 and GaAs, and full GaInP2/GaAs cascade devices have also bee

Materials aspects of multijunction solar
โœ S.A. Hussien; P. Colter; A. Dip; J.R. Gong; M.U. Erdogan; S.M. Bedair ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› Elsevier Science โš– 367 KB

Atomic layer epitaxy (ALE) was used to grow several components of the cascade solar cell structure in the AIGaAs/GaAs system. An ALE reactor was constructed for multiwafer growth with a growth rate of 0.6 p~m h -~. Device quality GaAs and AlxGal\_xAs films were grown with p-type background carbon do