✦ LIBER ✦

One-flux theory of saturated drain current in nanoscale transistors

✍ Scribed by Tang, Ting-wei; Fischetti, Massimo V.; Jin, Seonghoon; Sano, Nobuyuki

Book ID: 119373482
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 638 KB
Volume: 78
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2012.05.060

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Convergence of Hot-Carrier-Induced Satur

Convergence of Hot-Carrier-Induced Saturation Region Drain Current and On-Resistance Degradation in Drain Extended MOS Transistors

✍ Chen, J.F.; Shiang-Yu Chen; Kuo-Ming Wu; Shih, J.R.; Kenneth Wu 📂 Article 📅 2009 🏛 IEEE 🌐 English ⚖ 652 KB

On the theory of main flux saturation in

On the theory of main flux saturation in smooth airgap electrical machines

✍ K. -E. Hallenius 📂 Article 📅 1986 🏛 Springer 🌐 English ⚖ 505 KB

Effect of defects localised in the oxide

Effect of defects localised in the oxide of submicrometer NMOS transistor on substrate and drain currents

✍ A. Bouhdada; A. Nouacry; S. Bakkali; A. Touhami; R. Marrakh 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 194 KB

The increase of the MOS integration scale entails the presence of strong electrical fields in the MOS channel transistor, which cause the injection of hot carriers in the gate oxide and create defects at the Si/SiO 2 interface and in the oxide layer. These defects induce leakage currents and are res

The effect of drain offset on current-vo

The effect of drain offset on current-voltage characteristics in sub micron polysilicon thin-film transistors

✍ Olasupo, K.R.; Yarbrough, W.; Hatalis, M.K. 📂 Article 📅 1996 🏛 IEEE 🌐 English ⚖ 325 KB

[IEEE 2012 IEEE Silicon Nanoelectronics

[IEEE 2012 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2012.06.10-2012.06.11)] 2012 IEEE Silicon Nanoelectronics Workshop (SNW) - The impact of the carrier transport on the random dopant induced drain current variation in the saturation regime of advanced strained-silicon CMOS devices

✍ Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T.; Liang, C. 📂 Article 📅 2012 🏛 IEEE ⚖ 521 KB