✦ LIBER ✦

On the SiOx transition layer in abrupt Si-SiO2 chemical interface in MOS structures

✍ Scribed by J. Suñé; I. Placencia; N. Barniol; E. Farrés; X. Aymerich

Publisher: Elsevier Science
Year: 1989
Weight: 61 KB
Volume: 208
Category: Article
ISSN: 0167-2584
DOI: 10.1016/0167-2584(89)90578-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Dependence of the Si-SiO2 barrier height

Dependence of the Si-SiO2 barrier height on SiO2 thickness in MOS tunnel structures

📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 154 KB

Measurement of the interface layer thick

Measurement of the interface layer thickness in SiO2/Si structures by single-wavelength null ellipsometry

✍ Easwarakhanthan, T.; Alnot, P. 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 161 KB

A procedure for the determination of the interface layer thickness between the bulk Ðlm and the Si substrate SiO 2 from single-wavelength null ellipsometric data is described. The e †ect of the angular errors in the angle of incidence is eliminated because it is found along with the Ðlm and interfac

On the possibility of stress-induced sup

On the possibility of stress-induced superconductivity in the MOS inversion layer Si(100)/SiO2

✍ M.J. Kelly; A. Muramatsu; W. Hanke 📂 Article 📅 1982 🏛 Elsevier Science ⚖ 40 KB

Thermally stimulated field emission of c

Thermally stimulated field emission of charge from traps in the transition layer of SiSiO2 structures

✍ Yu.V. Gomeniuk; R.N. Litovski; V.S. Lysenko; I.N. Osiyuk; I.P. Tyagulski 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 362 KB

Interface states in MOS structures with

Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate Si : S. Kar and W. E. Dahlke, Solid St. Electron. 15 (1972), p. 221

📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 214 KB

Influence of interface charge inhomogene

Influence of interface charge inhomogeneities on the measurement of surface state densities in Si-SiO2 interfaces by means of the MOS a.c. conductance technique : Paul A. Muls, Gilbert J. Declerck and Roger J. van Overstraeten. Solid-St. Electron. 20, 911 (1977)

📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 251 KB