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On the robustness of LDD nMOS transistors subjected to measurement of drain breakdown voltage

✍ Scribed by Shian Aur; Amitava Chatterjee

Book ID: 103393565
Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 470 KB
Volume: 33
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(90)90218-4

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