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[IEEE ICSD'98. 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics - Vasteras, Sweden (22-25 June 1998)] ICSD'98. Proceedings of the 1998 IEEE 6th International Conference on Conduction and Breakdown in Solid Dielectrics (Cat. No.98CH36132) - Application of a negative sweep voltage to control gate of fresh flash memory devices to facilitate threshold voltage test measurement

✍ Scribed by Cha, C.L.; Chor, E.F.; Gong, H.; Teo, T.H.; Zhang, A.Q.; Chan, L.

Book ID: 126766693
Publisher: IEEE
Year: 1998
Weight: 447 KB
Category: Article
ISBN-13: 9780780342378
DOI: 10.1109/ICSD.1998.709273

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