Radiation hardness evaluation of SiGe HB
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M. UllΓ‘n; S. DΓez; F. Campabadal; M. Lozano; G. Pellegrini; D. Knoll; B. Heinema
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Article
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2007
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Elsevier Science
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English
β 430 KB
We studied the radiation hardness of different SiGe BiCMOS technologies in the search for a proper microelectronic technology to be used in the design of the Front-End chip for the readout of detectors of the Inner Detector of the ATLAS Upgrade for the future Super-LHC. Gamma and neutron irradiation