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On the consistent modeling of band-gap narrowing for accurate device-level simulation of scaled SiGe HBTs

✍ Scribed by Yun Shi; Guofu Niu; Cressler, J.D.; Harame, D.L.


Book ID
114617089
Publisher
IEEE
Year
2003
Tongue
English
Weight
582 KB
Volume
50
Category
Article
ISSN
0018-9383

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