On the nitridation-induced enhancement and degradation of MOSFET characteristics
β Scribed by H. Wong; Y.C. Cheng
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 232 KB
- Volume
- 33
- Category
- Article
- ISSN
- 0038-1101
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π SIMILAR VOLUMES
Apparent degradation of the RF characteristics of silicon MOSFETs was observed under normal operating conditions. We show that it was not caused by intrinsic device degradation but originated from a degradation of the contact resistance between probe and bonding pad. Guidelines, not limited to MOSFE
## Abstract The role of protein degradation in cellular proliferation was investigated by measurements of the rates of degradation of labile and stable proteins for a number of cell types under various growth conditions. The rate of protein degradation was found to be a relatively invariant paramet