✦ LIBER ✦

On the nature of ion implantation induced dislocation loops in 4H-silicon carbide

✍ Scribed by Persson, P. O. AÌ.; Hultman, L.; Janson, M. S.; HalleÌn, A.; Yakimova, R.; Panknin, D.; Skorupa, W.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Indium segregation to dislocation loops

✍ Noda, Taiji 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 690 KB

Physically based modeling of dislocation

✍ P. Castrillo; I. Martin-Bragado; R. Pinacho; M. Jaraiz; J.E. Rubio; K.R.C. Mok; 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 247 KB

High-resistance layers in n-type 4H-sili

✍ Nadella, Ravi K.; Capano, M. A. 📂 Article 📅 1997 🏛 American Institute of Physics 🌐 English ⚖ 257 KB

Influence of ion energy on damage induce

✍ Aurélie Gentils; Florence Linez; Aurélien Canizarès; Patrick Simon; Lionel Thomé 📂 Article 📅 2011 🏛 Springer 🌐 English ⚖ 583 KB

Observations of the influence of threadi

✍ Chen, Y.; Dudley, M.; Liu, K. X.; Stahlbush, R. E. 📂 Article 📅 2007 🏛 American Institute of Physics 🌐 English ⚖ 528 KB

The characterization of nitrogen-ion-irr

✍ Yang, T. N. ;Yu, G. P. ;Chen, L. J. 📂 Article 📅 1985 🏛 John Wiley and Sons 🌐 English ⚖ 534 KB