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Indium segregation to dislocation loops induced by ion implantation damage in silicon

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📜 SIMILAR VOLUMES

On the nature of ion implantation induce

✍ Persson, P. O. AÌ.; Hultman, L.; Janson, M. S.; HalleÌn, A.; Yakimova, R.; Pan 📂 Article 📅 2002 🏛 American Institute of Physics 🌐 English ⚖ 682 KB

Comparative investigation of damage indu

✍ T. Lohner; Z. Tóth; M. Fried; N.Q. Khánh; Gen Qing Yang; Lin Chen Lu; Zou Shicha 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 341 KB

Influence of ion energy on damage induce

✍ Aurélie Gentils; Florence Linez; Aurélien Canizarès; Patrick Simon; Lionel Thomé 📂 Article 📅 2011 🏛 Springer 🌐 English ⚖ 583 KB

Characterization of damage behavior indu

✍ Liang, J.H.; Wu, C.H. 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 430 KB

The effect of oxygen on segregation-indu

✍ O. V. Aleksandrov 📂 Article 📅 2006 🏛 Springer 🌐 English ⚖ 174 KB

Determination of dislocation loop size a

✍ Zaumseil, P. ;Winter, U. ;Cembali, F. ;Servidori, M. ;Sourer, Z. 📂 Article 📅 1987 🏛 John Wiley and Sons 🌐 English ⚖ 826 KB