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Physically based modeling of dislocation loops in ion implantation processing in silicon

✍ Scribed by P. Castrillo; I. Martin-Bragado; R. Pinacho; M. Jaraiz; J.E. Rubio; K.R.C. Mok; F.J. Miguel-Herrero; J. Barbolla

No coin nor oath required. For personal study only.

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