Observations of the influence of threading dislocations on the recombination enhanced partial dislocation glide in 4H-silicon carbide epitaxial layers

✍ Scribed by Chen, Y.; Dudley, M.; Liu, K. X.; Stahlbush, R. E.

• Book ID: 111965912
• Publisher: American Institute of Physics
• Year: 2007
• Tongue: English
• Weight: 528 KB
• Volume: 90
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.2734499