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On the kinetics of the generation of point defects in the Si-SiO2system

✍ Scribed by D. Kropman,S. Dolgov,T. Karner


Book ID
118290208
Publisher
Springer
Year
1996
Tongue
English
Weight
209 KB
Volume
62
Category
Article
ISSN
1432-0630

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Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp