✦ LIBER ✦

On the kinetics of generation of point defects in the Si-SiO2 system

✍ Scribed by D. Kropman; U. Abru; A. Samoson; T. Kärner

Book ID: 114086768
Publisher: Elsevier Science
Year: 1999
Tongue: English
Weight: 284 KB
Volume: 343-344
Category: Article
ISSN: 0040-6090
DOI: 10.1016/s0040-6090(98)01721-0

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

On the kinetics of the generation of poi

On the kinetics of the generation of point defects in the Si-SiO2system

✍ D. Kropman,S. Dolgov,T. Karner 📂 Article 📅 1996 🏛 Springer 🌐 English ⚖ 209 KB

Interaction between point defects in the

Interaction between point defects in the Si–SiO2 system during the process of its formation

✍ D Kropman; T Kärner; A Samoson; I Heinmaa; Ü Ugaste; E Mellikov 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 136 KB

Interaction between point defects, exten

Interaction between point defects, extended defects and impurities in the Si–SiO2 system during the process of its formation

✍ D. Kropman; T. Kärner; U. Abru; Ü. Ugaste; E. Mellikov; M. Kauk 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 174 KB

Parameters controlling the generation of

Parameters controlling the generation of natural intrinsic EX defects in thermal SiO2 on Si

✍ A. Stesmans; F. Scheerlinck 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 317 KB

Generation of defects at Si-SiO2 interfa

Generation of defects at Si-SiO2 interface in electron beam lithography

✍ Takuo Sugano; Ching-Fa Yeh 📂 Article 📅 1981 🏛 John Wiley and Sons 🌐 English ⚖ 444 KB

The peculiarities of Si/SiO2 interfaces

The peculiarities of Si/SiO2 interfaces in the Si–SiO2 systems with Si nanocrystals

✍ T. Kryshtab; G. Gómez Gasga; N. Korsunska; M. Baran; S. Kirillova; L. Khomenkova 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 281 KB

Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp