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On the kinetics of generation of point defects in the Si-SiO2 system

✍ Scribed by D. Kropman; U. Abru; A. Samoson; T. Kärner


Book ID
114086768
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
284 KB
Volume
343-344
Category
Article
ISSN
0040-6090

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Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp