Interaction between point defects, extended defects and impurities in the Si–SiO2 system during the process of its formation

✍ Scribed by D. Kropman; T. Kärner; U. Abru; Ü. Ugaste; E. Mellikov; M. Kauk

• Publisher: Elsevier Science
• Year: 2004
• Tongue: English
• Weight: 174 KB
• Volume: 114-115
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2004.07.045