## Abstract The growth of ultraβthin TaβN films using atomic layer deposition (ALD) is investigated by inβsitu Xβray photoelectron spectroscopy (XPS) starting from the first precursor pulse, as precursor substances __tert__βbutylimidoβtris(diethylamido)tantalum (TBTDET) and __tert__βbutylimidoβbis(
β¦ LIBER β¦
On the initial growth of atomic layer deposited TiO2 films on silicon and copper surfaces
β Scribed by Qian Tao; Kirsten Overhage; Gregory Jursich; Christos Takoudis
- Book ID
- 116943647
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 915 KB
- Volume
- 520
- Category
- Article
- ISSN
- 0040-6090
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