𝔖 Bobbio Scriptorium
✦   LIBER   ✦

On the gettering efficiency of buried layers in dielectrically insulated structures

✍ Scribed by Kissinger, G. ;Tittelbach-Helmrich, K. ;Knopke, J. ;Retzlaff, U.


Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
201 KB
Volume
121
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Synthesis of buried silicon oxynitride l
✍ A.D. Yadav; Rucha H. Polji; Vibha Singh; S.K. Dubey; T.K. Gundu Rao πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 252 KB

Silicon oxynitride (Si x O y N z ) buried insulating layers were synthesized by SIMNOX (separation by implanted nitrogen-oxygen) process by 14 N + and 16 O + ion implantation to high fluence levels 1 β€’ 10 17 , 2.5 β€’ 10 17 and 5 β€’ 10 17 ions cm Γ€2 sequentially in the ratio 1:1 at 150 keV into p-type

ChemInform Abstract: Growth of Buried Ox
✍ E. SCHROER; S. HOPFE; Q. Y. TONG; U. GOESELE; W. SKORUPA πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons βš– 29 KB πŸ‘ 2 views

## Abstract ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a β€œFull Text” option. The original article is trackable v

Properties of the buried oxide layer in
✍ A.G. Revesz; H.L. Hughes πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 605 KB

After a short summary of the status of the buried 6x~qCle layer in SIMOX structures as of 1994, this pal~er reviews the developments since then. The main fOf~iCS are as follows: effects of processing condltiOttS, such aS low oxygen dose implantation, add;lionel oxidation; holetrappng behavior and co