On the gettering efficiency of buried layers in dielectrically insulated structures
β Scribed by Kissinger, G. ;Tittelbach-Helmrich, K. ;Knopke, J. ;Retzlaff, U.
- Publisher
- John Wiley and Sons
- Year
- 1990
- Tongue
- English
- Weight
- 201 KB
- Volume
- 121
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
Silicon oxynitride (Si x O y N z ) buried insulating layers were synthesized by SIMNOX (separation by implanted nitrogen-oxygen) process by 14 N + and 16 O + ion implantation to high fluence levels 1 β’ 10 17 , 2.5 β’ 10 17 and 5 β’ 10 17 ions cm Γ2 sequentially in the ratio 1:1 at 150 keV into p-type
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After a short summary of the status of the buried 6x~qCle layer in SIMOX structures as of 1994, this pal~er reviews the developments since then. The main fOf~iCS are as follows: effects of processing condltiOttS, such aS low oxygen dose implantation, add;lionel oxidation; holetrappng behavior and co