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On the formation of copper-rich copper silicides

✍ Scribed by L. Stolt; F.M. D'Heurle; J.M.E. Harper

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
467 KB
Volume
200
Category
Article
ISSN
0040-6090

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Formation of copper interconnects by the
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✍ Kazuhide Abe; Yusuke Harada; Keiichi Hashimoto; Hiroshi Onoda πŸ“‚ Article πŸ“… 1996 πŸ› John Wiley and Sons 🌐 English βš– 945 KB

The formation of Cu interconnects using conventional sputtering and reflow processes has been studied. The use of W, Mo, and TiN underlayers makes it possible to fill grooves with Cu at reflow temperatures as low as 450Β°C. There is a close relationship between filling characteristics and agglomerati