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On the electron mobility enhancement in biaxially strained Si MOSFETs

✍ Scribed by F. Driussi; D. Esseni; L. Selmi; P.-E. Hellström; G. Malm; J. Ha˚llstedt; M. Östling; T.J. Grasby; D.R. Leadley; X. Mescot

No coin nor oath required. For personal study only.

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