Average drift mobility and apparent sheet-electron density profiles in strained-Si-SiGe buried-channel depletion-mode n-MOSFETs

✍ Scribed by Michelakis, K.; Vilches, A.; Papavassiliou, C.; Despotopoulos, S.; Fobelets, K.; Toumazou, C.

• Book ID: 114617518
• Publisher: IEEE
• Year: 2004
• Tongue: English
• Weight: 456 KB
• Volume: 51
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2004.832727