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An analytical model for the electron velocity overshoot effects in strained-Si on SixGe1-x MOSFETs

✍ Scribed by Roldan, J.B.; Gamiz, F.; Lopez-Villanueva, J.A.; Carceller, J.E.

Book ID: 114537255
Publisher: IEEE
Year: 1998
Tongue: English
Weight: 87 KB
Volume: 45
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.662819

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