The influence of dislocations on nitrogen±oxygen (N±O) complexes in nitrogen-doped Czochralski (NCZ) silicon was investigated. It was found that N±O complexes were generated during annealing at 650 C for 10 min. In the early stage of annealing the amount of the N±O complexes in NCZ silicon with disl
✦ LIBER ✦
On the DLTS-characterization of dislocation states in silicon
✍ Scribed by Dr. W. Szkiełko; Dr. O. Breitenstein; Dr. R. Pickenhein
- Publisher
- John Wiley and Sons
- Year
- 1981
- Tongue
- English
- Weight
- 331 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0232-1300
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