Single crystal epitaxial layers of A1,Gal -,As solid solutions and GaAs-Al,Gal -,As heterojunctions were obtained on gallium arsenide substrates by crystallization from a solution of arsenic in a gallium-aluminium melt,. Multilayer structures of the type p(n)GaAs-p(n)Al,~Gal-,,As-p(n)Al,,Gal-., As-n
On a Possibility of Determining Nonuniformities in AlxGa1−xAs Solid Solution Compositions
✍ Scribed by Dr. T. D. Dzhafarov; Yu. P. Demakov; A. V. Rumyantseva
- Publisher
- John Wiley and Sons
- Year
- 1974
- Tongue
- English
- Weight
- 236 KB
- Volume
- 9
- Category
- Article
- ISSN
- 0232-1300
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✦ Synopsis
Abstract
Both surface and bulk nonuniformities in Al~x~Ga~1−x~As solid solution compositions were determined by surface radiography of epitaxial Al~x~Ga~1−x~AsGaAs hetero‐junctions with diffused radioactive Zn^65^ atoms.
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