✦ LIBER ✦
ChemInform Abstract: 905 nm Wavelength Laser as a Means for in situ End-Point Detection of Dry Etching of AlxGa1-xAs on GaAs.
✍ Scribed by J. W. Lee; R. Westerman; K. D. Mackenzie; J. F. Donohue; D. Johnson; J. N. Sasserath; K. Liddane; S. J. Pearton
- Publisher
- John Wiley and Sons
- Year
- 2010
- Weight
- 34 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0931-7597
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