Observations of dislocations and junction irregularities in bipolar transistors using the E.B.I.C. mode of the scanning electron microscope
β Scribed by P. Ashburn; C.J. Bull
- Publisher
- Elsevier Science
- Year
- 1979
- Tongue
- English
- Weight
- 718 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0038-1101
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
## Abstract We describe a method to obtain the brightness and number of molecules at each pixel of an image stack obtained with a laser scanning microscope. The method is based on intensity fluctuations due to the diffusion of molecules in a pixel. For a detector operating in the analog mode, the v
## Abstract The morphology of a freshβsnow specimen and the sublimationβinduced structural changes in an individual snow crystal were examined using a highβvacuum scanning electron microscope (SEM) equipped with a cryo system. The snow specimen was collected during a snowfall in Hanover, NH, USA, a