We have investigated transport characteristics of epitaxial graphene grown on semi-insulating siliconface 4H-silicon carbide (SiC) substrate by thermal decomposition method in relatively high N 2 pressure atmosphere. We have succeeded in forming 1-2 layers of graphene on SiC in controlled manner. Th
β¦ LIBER β¦
Observation of the Ambient Effect in BTI Characteristics of Back-Gated Single Layer Graphene Field Effect Transistors
β Scribed by Liu, Wen Jun; Sun, Xiao Wei; Tran, Xuan Anh; Fang, Zheng; Wang, Zhong Rui; Wang, Fei; Wu, Ling; Zhang, J. F.; Wei, Jun; Zhu, Hui Long; Yu, Hong Yu
- Book ID
- 120658061
- Publisher
- IEEE
- Year
- 2013
- Tongue
- English
- Weight
- 827 KB
- Volume
- 60
- Category
- Article
- ISSN
- 0018-9383
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Nanoscale science and technology have occupied centre stage globally in modern scientific research and discourses in the early twenty first century. The enabling nature of the technology makes it important in modern electronics, computing, materials, healthcare, energy and the environment. This volu