Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors

✍ Scribed by Y.G. Xiao; M.H. Tang; Y. Xiong; J.C. Li; C.P. Cheng; B. Jiang; H.Q. Cai; Z.H. Tang; X.S. Lv; X.C. Gu; Y.C. Zhou

• Book ID: 116337638
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 526 KB
• Volume: 12
• Category: Article
• ISSN: 1567-1739
• DOI: 10.1016/j.cap.2012.05.008