Self-correction of field-effect transistor characteristics in the mode of spontaneous space-charge ion polarization of gate oxide

✍ Scribed by A. G. Zhdan; V. G. Naryshkina; G. V. Chucheva

• Book ID: 111444336
• Publisher: Springer
• Year: 2009
• Tongue: English
• Weight: 158 KB
• Volume: 43
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/s106378260905025x