Observation of e2/h Conductance Steps in a Side-Gate Point Contact on In0.75Ga0.25As/In0.75Al0.25As Heterostructure
β Scribed by T. Kita; S. Gozu; Y. Sato; S. Yamada
- Book ID
- 110438309
- Publisher
- Springer
- Year
- 2003
- Tongue
- English
- Weight
- 132 KB
- Volume
- 16
- Category
- Article
- ISSN
- 0896-1107
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π SIMILAR VOLUMES
We report magnetotransport experiments in high carrier density GaAs/GaoslnozAs/Gao.75Alo25As heterostructures in magnetic fields up to 50 T. At the lowest electron densities the quantized Hall effect is observed, with one subband occupied. As the density is increased, features indicating the populat
Self-aligned inversion-channel In 0.75 Ga 0.25 As metal-oxide-semiconductor field-effect transistors (MOSFETs) using molecular beam epitaxy (MBE) deposited Al 2 O 3 /Ga 2 O 3 (Gd 2 O 3 ) [GGO] as gate dielectrics and TiN as metal gates were fabricated. The 1-mm-gate-length In 0.75 Ga 0.25 As MOSFETs