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O2oxidation reaction at the Si(100)-SiO2interface: A first-principles investigation

✍ Scribed by A. Bongiorno; A. Pasquarello


Book ID
106390702
Publisher
Springer
Year
2005
Tongue
English
Weight
329 KB
Volume
40
Category
Article
ISSN
0022-2461

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We explore the hydrogen-related microstructures involved in hot electron defect creation at the Si(100)-SiO 2 interface of metal-oxide-semiconductor field effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk si